[B-8-2] Influence of bulk bias on NBTI of pMOSFETs with ultrathin SiON gate dielectric

Shiyang Zhu、Anri Nakajima、Takuo Ohashi、Hideharu Miyake (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Elpida Memory, Inc.)

https://doi.org/10.7567/SSDM.2005.B-8-2