The Japan Society of Applied Physics

[C-9-2] Integration of ultra shallow junctions in PVD TaN nMOS transistors with Flash Lamp Annealing

S. Severi、K. De Meyer、B. J. Pawlak、R. Duffy、C. Kerner、S. McCoy、J. Gelpey、T. Selinger、L-A Ragnarsson、P. P. Absil、M. Jurczak、S. Biesemans (1.IMEC、2.Katholieke Universiteit. Leuven, ESAT-INSYS、3.Philips Research Leuven、4.Mattson Technology Canada)

https://doi.org/10.7567/SSDM.2005.C-9-2