[P1-29L] Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs

Keiji Ikeda、Yoshimi Yamashita、Noriyuki Taoka、Naoharu Sugiyama、Shin-ichi Takagi (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.The University of Tokyo)

https://doi.org/10.7567/SSDM.2005.P1-29L