Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND　Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

Ki-Tae Park; SeungChul Lee; Jongsun Sel; Jungdal Choi; Kinam Kim

doi:https://doi.org/10.7567/SSDM.2006.C-6-4L

[C-6-4L] Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND　Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

Ki-Tae Park, SeungChul Lee, Jongsun Sel, Jungdal Choi, Kinam Kim (1.Semiconductor R&D Center, CAE Team, Memory Business, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2006.C-6-4L

2006 International Conference on Solid State Devices and Materials

[C-6-4L] Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell

[C-6-4L] Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND　Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell