In-situ comparison of Si/High-K and Si/SiO2 interface properties in FD SOI MOSFETs operated at low temperature

L. Pham-Nguyen; C. Fenouillet-Beranger; S. Cristoloveanu; A. Vandooren; M. Orlowski; G. Ghibaudo

doi:https://doi.org/10.7567/SSDM.2007.P-3-5

2007 International Conference on Solid State Devices and Materials

2007年9月18日〜 2007年9月21日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[P-3-5] In-situ comparison of Si/High-K and Si/SiO2 interface properties in FD SOI MOSFETs operated at low temperature

L. Pham-Nguyen、C. Fenouillet-Beranger、S. Cristoloveanu、A. Vandooren、M. Orlowski、G. Ghibaudo (1.IMEP-INPG MINATEC、2.FREESCALE Semiconductors、3.ST Microelectronics)

https://doi.org/10.7567/SSDM.2007.P-3-5

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