[A-5-2] Chemical Bonding-Induced Dipole at the HfO₂/Si Interface

N. Miyata^1,2、Y. Abe^1,2、T. Yasuda¹ (1.AIST、2.Musashi Inst. of Tech., Japan)

https://doi.org/10.7567/SSDM.2008.A-5-2