[A-1-1] Control of Interface Properties of High-k/Ge with GeO₂ Interface Layer (Invited)

K. Kita¹, T. Nishimura¹, K. Nagashio¹, A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] High-k Gated Germanium Metal-Oxide-Semiconductor Capacitors with GeO₂ Surface Passivation and Fluorine Incorporation

R. Xie^1,2, W. He¹, M. Yu², C. Zhu¹ (1.National Univ. of Singapore, 2.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Improvement of Interface Properties of GeO₂/Ge MOS Structures Fabricated by Thermal Oxidation

T. Sasada¹, H. Matsubara¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Amorphous High-k LaLuO₃ Dielectric Film for Ge MIS Gate Stack

T. Tabata¹, K. Kita¹, A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Reaction Kinetics Control on Thermal Oxidation Process of Ge in High Pressure Oxygen

C. H. Lee¹, T. Nishimura¹, K. Nagashio¹, K. Kita¹, A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Performance and Reliability of High-k/Metal Gate Stacks: Interfacial Layer Defects (Invited)

G. Bersuker¹ (1.SEMATECH, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Impact of the Activation Annealing Temperature on the Performance, NBTI and TDDB Lifetime of High-k/Metal Gate Stack pMOSFETs

M. Sato¹, T. Aoyama¹, Y. Nara¹, Y. Ohji¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric

C. Y. Kang¹, C. S. Park¹, H. K. Park¹, S. C. Song¹, R. Choi¹, B. H. Park², B. Woo², K. T. Lee³, J. Lee⁴, H. Hwang⁴, G. Bersuker¹, B. H. Lee¹, H. H. Tseng¹, R. Jammy⁵ (1.SEMATECH, 2.Poongsan Microtech, USA, 3.POSTECH, 4.GIST, Korea, 5.IBM Assignee, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] V_t Variation Suppressed Al₂O₃-Capped HfO₂ Gate Dielectrics for Low V_t pMISFETs with High-k/Metal Gate Stacks

T. Morooka¹, T. Matsuki¹, N. Mise¹, S. Kamiyama¹, T. Nabatame¹, T. Eimori¹, Y. Nara¹, Y. Ohji¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Generation of a New Interface-State Associated with Ultra-Thin Gate Dielectrics/Silicon under Electric Stress

H. Mori¹, H. Matsuyama¹, S. Watanabe² (1.Fujitsu Microelectronics Ltd., 2.Fujitsu Labs. Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download