[P-2-10] Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators

Y. Okuyama¹, J. P. Ao¹, I. Awai², Y. Ohno¹ (1.Univ. of Tokushima, 2.Ryukoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-2-11] Impact of Dimension of Orthogonal Floating Shielding Lines beneath Coplanar Waveguide Transmission Line on Suppressing Substrate Effect

M. C. Tang¹, Y. K. Fang¹, T. Cheng², W. S. Liao², D. C. Chen², C. S. Yeh², S. C. Chien² (1.National Cheng Kung Univ., 2.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-2-12] Anodic Alumina Substrate using Via in Pad for Memory Package Applications

J. Jo¹, J. M. Yook¹, M. Kim² (1.KAIST, 2.Kongju National Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-2-13] Design of High-Q MIS-Varactors with Layout Modification

T. L. Li¹, S. Huang¹, B. Hung¹, C. Y. Tzeng¹, V. Liang¹, S. C. Chien¹ (1.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-2-14] Enhancement of Wafer Test Yield of CIS Device with MicroLens Formed by the Optimized LTO Film

K. Park¹, S. Ryu¹, J. Yang¹, S. Lee¹, M. Han¹, H. Choi¹, H. Lee¹, J. Han¹ (1.Dongbu HiTek Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-1] Novel Asymmetric SiGe/Strained-Silicon Heterojunction Channel MOSFET

G. Gupta¹, J. Woo¹ (1.UCLA, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-2] Calculation of Strain Effects on the I-V Characteristics of Ultra Small MOSFETs based on NEGF Approach

H. Fitriawan¹, S. Souma¹, M. Ogawa¹ (1.Kobe Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-3] The Impact of Pre-Ion Implantation (PII) on the Characteristics of Nickel Germanide Films and NiGe/Ge Schottky Diodes

X. An¹, C. Fan¹, R. Huang¹, X. Zhang¹ (1.Peking Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-4] Minority Carrier Response Characteristics in Germanium MOS Capacitor

C. C. Cheng¹, C. H. Chien^1,2, G. L. Luo², H. C. Chiang¹, H. S. Chen¹, C. L. Lin¹, C. C. Kei³, C. N. Hsiao³, C. Y. Chang¹ (1.National Chiao Tung Univ., 2.National Nano Device Labs., 3.National Applied Res. Labs., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-5] Improved Analytic I-V Model of the Long-Channel Undoped Surrounding-Gate MOSFET

A. Son¹, J. Kim¹, N. Jeong¹, J. Choi², H. Shin¹ (1.Ewha Womans Univ., 2.Hynix Semiconductor Inc., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

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