[G-3-5] Low-Capacitance Low-Voltage Transient Voltage Suppression Circuit by Diode Activated SiGe HBT in SiGe HBT BiCMOS Process

S. H. Dai¹, J. J. Peng¹, C. C. Chen¹, C. J. Lin¹, Y. C. King¹ (1.National Tsing Hua Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-5-1] GaN HEMTs "Present Status and Future Prospect" (Invited)

T. Kikkawa^1,2, S. Nakajima³ (1.Fujitsu Ltd., 2.Fujitsu Labs. Ltd., 3.Eudyna Devices Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-5-2] V_T-V_SUB Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN

C. Y. Hu¹, K. Nakatani¹, D. Kikuta², M. Sugimoto³, J. P. Ao¹, Y. Ohno¹ (1.Univ. of Tokushima, 2.Toyota Central R&D Labs., Inc., 3.Toyota Motor Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-5-3] High-Temperature Performance of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier

K. Y. Wong¹, W. Chen¹, W. Huang¹, K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-5-4] GaN Schottky Diodes for Microwave Power Rectification

K. Takahashi¹, J. P. Ao¹, Y. Ikawa¹, C. Y. Hu¹, H. Kawai², N. Shinohara³, N. Niwa⁴, Y. Ohno¹ (1.Univ. of Tokushima, 2.POWDEC K.K, 3.Univ. of Kyoto, 4.Kajima Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-6-1] Failure Mechanisms of GaN-Based Transistors in On-and Off- State (Invited)

E. Zanoni¹, G. Meneghesso¹, C. Dua², M. Peroni³, M. Uren⁴ (1.Univ. of Padova, Italy, 2.Alcatel-Thales III-V Lab., France, 3.Selex SI, Italy, 4.QinetiQ Ltd., UK)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-6-2] Precise C-V Analysis of Insulated-gate/AlGaN/GaN Interfaces

M. Miczek¹, B. Adamowicz¹, C. Mizue², T. Hashizume² (1.Silesian Univ. of Tech., Poland, 2.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-6-3] Near-midgap Deep Levels in MOVPE-grown AlGaN

K. Sugawara¹, J. Kotani¹, T. Hashizume¹ (1.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-6-4] On the Stability of Fluorine Ions in AlGaN/GaN System: a Theoretical Study

L. Yuan¹, M. Wang¹, K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-7-1] 4H-SiC Trench MOSFETs with Low On Resistance

Y. Nakano¹, T. Mukai¹, R. Nakamura¹, T. Nakamura¹, A. Kamisawa¹ (1.ROHM Co., Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (261 - 270)

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