[J-5-2] Low Temperature GAA Poly-Si Nanowire TFT SONOS Memory for MLC Application

J. Fu^1,2, Y. Jiang^1,2, N. Singh¹, C. X. Zhu^1,2, G. Q. Lo¹, N. Balasubramanian¹, D. L. Kwong¹ (1.Inst. of Microelectronics, 2.National Univ. of Singapore, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-5-3] Multi-Gate Metal Nano-crystal Memories with TiN Nano-crystals, High-k Blocking Dielectric and High Work Function Gate Electrode

C. P. Lu¹, C. K. Luo¹, B. Y. Tsui¹, C. H. Lin², P. J. Tzeng², C. C. Wang², M. J. Tsai² (1.National Chiao Tung Univ., 2.Industrial Tech. Res. Inst., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-6-1] Numerical Simulation of the Read Disturb Behavior on the ONO Scaling Margin in SONOS Flash Memory

C. H. Lee^1,2, C. W. Wu¹, S. W. Lin¹, T. H. Yeh¹, S. H. Gu¹, K. F. Chen¹, Y. J. Chen¹, J. Y. Hsieh¹, I. J. Huang¹, N. K. Zous¹, T. T. Han¹, M. S. Chen¹, W. P. Lu¹, K. C. Chen¹, T. Wang^1,2, C. Y. Lu¹ (1.Macronix International Co., Ltd, 2.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-6-2] A Low Voltage Programming Scheme Feasible for 2-Bit Operation of SONOS Flash Memory with Excellent Data Retention

J. H. Kuo¹, S. S. Chung¹, Y. H. Tseng², C. S. Lai², Y. Y. Hsu³, E. Ho³, T. Chen³, L. C. Peng³, C. H. Chu³ (1.National Chiao Tung Univ., 2.Chang Gung Univ., 3.ProMOS Tech. Inc., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-6-3] A New Embedded NVM Thin Film Cell for Low Voltage Applications

G. Bossu^1,2, A. Demolliens^1,2, S. Puget^1,2, P. Masson³, J. M. Portal², R. Bouchakour², P. Mazoyer¹, T. Skotnicki¹ (1.STMicroelectronics, 2.IM2NP, 3.Univ. de Nice-Sophia Antipolis, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-6-4] New Charge Pumping Method for Extraction of Nitride Trap Energy Distribution in SONOS Flash Memory

W. H. Choi¹, S. S. Park¹, I. S. Han¹, H. M. Kwon¹, O. S. Yoo¹, M. K. Na¹, K. I. Choi¹, D. H. Nam¹, J. C. Om², S. S. Lee², H. S. Joo², H. D. Lee¹, G. W. Lee¹ (1.Chungnam National Univ., 2.Hynix Semiconductor Inc., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-7-1] Enhanced Memory Performances of Advanced Impurity Trap Memory with Atomic-scale Ti Impurity Embedded in Ultrathin LaAlO₃ as a Charge Trap Layer

S. Jung¹, H. Choi¹, Y. Ju¹, M. Chang¹, M. Pyun¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-7-2] Study of Fluorine Incorporation in the Blocking Oxide of Metal-Alumina-Nitride-Oxide-Silicon-type Flash Memory Devices

M. Chang¹, J. Lee¹, Y. Ju¹, S. Jung¹, H. Choi¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-7-3] Effect of High Pressure Oxygen Annealing (HPOA) on the Electrical Characteristics of Metal-Alumina-Nitride-Oxide-Silicon (MANOS)-type Flash Memory Devices

Y. Ju¹, M. Chang¹, S. Jung¹, M. Jo¹, J. Lee¹, J. Yoon¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-7-4] Multi-Level-Storage in Lateral SbTeN-based Phase-Change Memory with an Additional Top TiN Layer

Y. Yin¹, K. Ota¹, T. Noguchi¹, H. Sone¹, S. Hosaka¹ (1.Gunma Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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