[H-1-5] Floating Gate Memory based on Ferritin Nanodots with High-k Gate Dielectrics

K. Ohara¹, Y. Uraoka¹, T. Fuyuki¹, I. Yamashita¹, T. Yaegashi², M. Moniwa², M. Yoshimaru² (1.NAIST, 2.STARC, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-1-6] Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots

M. Ikeda¹, R. Matsumoto¹, K. Shimanoe¹, K. Makihara¹, S. Miyazaki¹ (1.Hiroshima Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-2-1] Single Artificial Atom Lasing (Invited)

J. S. Tsai^1,2,3, O. Astafiev^1,2, K. Inomata², A. O. Niskanen^3,4, T. Yamamoto^1,2,3, Y. A. Pashkin^1,2, Y. Nakamura^1,2,3 (1.NEC Corp., 2.RIKEN, 3.CREST-JST, Japan, 4.VTT Technical Res. Center of Finland, Finland)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-2-2] Perfect Invisibility using a Partially Left-handed Refracting Material

J. C. Nacher¹, U. Leonhardt², T. Ochiai³ (1.Future Univ.-Hakodate, Japan, 2.Univ. of St. Andrews, UK, 3.Toyama Prefectural Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-2-3] Observation of a New Isoelectronic Trap Luminescence in Nitrogen δ-doped GaP

M. Ikezawa¹, Y. Sakuma², M. Watanabe¹, Y. Masumoto¹ (1.Univ. of Tsukuba, 2.NIMS, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-2-4] Graphene Nanoribbon Phototransistor: Proposal and Analysis

V. Ryzhii^1,4, M. Ryzhii^1,4, N. Ryabova^1,4, V. Mitin², T. Otsuji^3,4 (1.Univ. of Aizu, Japan, 2.Univ. at Buffalo, USA, 3.Tohoku Univ., 4.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-2-5] Integration Recording System of Mechanoluminescence from Europium-doped SrAl₂O₄ by using Photo Sensitive Material

N. Terasaki¹, H. Kawahara¹, C. N. Xu^1,2 (1.AIST, 2.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-2-6] Visualization of Weak Confinement Potentials by Near-field Optical Imaging Spectroscopy of Exciton and Biexciton in a Single Quantum Dot

Y. Sugimoto¹, T. Saiki¹, S. Nomura² (1.Keio Univ., 2.Tsukuba Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-3-2] Low-Energy Oxygen Ion Irradiation Effects on Carbon Nanotube Field-Effect Transistors with Passivation Films

S. Nagaso¹, Y. Ohno¹, K. Maehashi¹, K. Inoue¹, K. Yamamoto², K. Matsumoto^1,2 (1.Osaka Univ., 2.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-3-3] High-density Horizontally-aligned Growth of Carbon Nanotubes for High-performance Field-effect Transistors

Y. Ohno¹, D. Phokharatkul¹, H. Nakano², S. Kishimoto¹, T. Mizutani¹ (1.Nagoya Univ., 2.ULVAC, Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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