[B-7-4] Mitigation of CMOS Variability with Metal Gate

J. W. Yang¹, C. S. Park¹, H. R. Harris¹, C. E. Smith¹, H. Adhikari¹, J. Huang¹, D. Heh¹, P. Majhi¹, R. Jammy¹ (1.SEMATECH, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] Simulation of Material and Strain Engineering of Tunneling Field-Effect Transistor with Subthreshold Swing below 60mV/decade (Invited)

G. Samudra¹, Y. C. Yeo¹, C. H. Heng¹, E. H. Toh¹, L. Yang¹ (1.National Univ. of Singapore, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-8-2] Understanding the Effect of Laser Anneal on LSTP 45nm Node MOS Transistor Electrical Parameters

A. Cros¹, S. Renard¹, M. Bidaud¹, R. Ranica¹, G. Ribes¹, E. Josse¹, B. Dumont¹, R. Beneyton¹, K. Barla¹, M. Haond¹, H. Brut¹ (1.STMicroelectronics, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] N-Channel MOSFETs with Embedded Silicon-Carbon Source/Drain Stressors Formed using Novel Cluster-Carbon Implant and Excimer Laser-Induced Solid Phase Epitaxy

S. M. Koh¹, K. Sekar², W. Krull², X. Wang³, G. Samudra¹, Y. C. Yeo¹ (1.National Univ. of Singapore, Singapore, 2.SemEquip Inc., USA, 3.Singapore Inst. of Manufacturing Tech., Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] Steeper Indium Halo Formation of nMOSFET by Reducing Interstitial Supersaturation with Flash Lamp pre-Annealing and its Modeling with Atomistic Kinetic Monte Carlo

T. Sawada², N. Zographos⁴, H. Yoshimura¹, T. Sanuki¹, T. Ito¹, T. Itani¹, H. Aikawa¹, O. Fujii¹, N. Kariya³, M. Oulmane⁴, R. Gull⁴, Y. Akiyama³, M. Ikeda³, M. Iwai¹, F. Matsuoka¹ (1.Toshiba Corp., 2.Toshiba Information Systems Tech. Inc., 3.NEC Electronics Corp., Japan, 4.Synopsys Switzerland LLC, Switzerland)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] A Study on Very High Performance Novel Balanced FD-SOI CMOSFETs on Si(110) using Accumulation Mode Device Structure for RF Analog Circuits

W. Cheng¹, A. Teramoto¹, C. Tye¹, R. Kuroda¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-9-2] Comparison of Plasma Doping with Implant for High Performance SOI CMOS Fabrication

K. L. Lee¹, I. Lauer¹, J. Li¹, P. Porshnev², P. Ronsheim¹, J. Gardner¹, P. Kozlowski¹, K. Santhanam², M. Foad², D. G. Park¹ (1.IBM, 2.Applied Materials Inc., USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-9-3] Evaluation of Threshold-Voltage Variation in Silicon on Thin BOX (SOTB) CMOS and its Impact on Decreasing Standby Leakage Current

N. Sugii¹, R. Tsuchiya¹, T. Ishigaki¹, Y. Morita¹, H. Yoshimoto¹, T. Iwamatsu², H. Oda², Y. Inoue², T. Hiramoto³, S. Kimura¹ (1.Hitachi, Ltd., 2.Renesas Tech. Corp., 3.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-9-4] Effect of Poly/SiON Gate Stack Combined with Thin BOX and Ground Plane for Low Vth and Analog Applications of FDSOI Devices

C. Fenouillet-Beranger^1,2, P. Perreau^1,2, S. Kohler¹, F. Arnaud¹, M. Cassé², X. Garros², C. Laviron^1,2, P. Garnier¹, P. Rivallin², D. Chanemougame¹, R. Beneyton¹, A. Torres^1,2, D. Barge¹, N. Cherault¹, P. Gouraud¹, F. Leverd¹, E. Deloffre¹, M. Gros-Jean¹, N. Loubet¹, F. Abbate¹, M. Fournier¹, M. Gattefait¹, J. D. Chapon¹, B. Le-Gratiet¹, M. Gregoire¹, J. Bienacel¹, P. Gros¹, N. Kubler¹, G. Guierleo¹, C. Mezzomo¹, M. Marin¹, C. Leyris¹, R. Pantel¹, O. Faynot², C. Buj², F. Andrieu², S. Barnola², T. Salvetat², S. Denorme¹, S. Deleonibus², T. Skotnicki¹ (1.STMicroelectronics, 2.CEA-LETI/MINATEC, France)

2008 International Conference on Solid State Devices and Materials |PDF Download

[B-9-5] Characteristics of Thin-Body <100> Channel SOI MOSFETs by using Two Step Elevated Silicon Eptaxtial Process

K. Ishikawa¹, T. Iwamatsu¹, T. Terada¹, H. Oda¹, Y. Inoue¹ (1.Renesas Tech. Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download