[B-8-1] Simulation of Material and Strain Engineering of Tunneling Field-Effect Transistor with Subthreshold Swing below 60mV/decade (Invited)
G. Samudra1, Y. C. Yeo1, C. H. Heng1, E. H. Toh1, L. Yang1
(1.National Univ. of Singapore, Singapore)
https://doi.org/10.7567/SSDM.2008.B-8-1