[G-9-1] Light Weight High Efficiency III-V Solar Cells using Epitaxial Lift Off(ELO) (Invited)

N. Pan¹, R. Tatavarti¹, G. Hillier¹, C. Youtsey¹, G. Martin¹, A. Wibowo¹, R. Navaratnarajah¹, F. Tuminello¹, M. Disabb¹ (1.MicroLink Devices, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO₂ on InGaAs and InAlAs

M. Kobayashi¹, P. T. Chen¹, S. Sun², N. Goel³, M. Garner³, W. Tsai³, P. Pianetta², Y. Nishi¹ (1.Stanford Univ., 2.Stanford Synchrotron Radiation Lab., 3.Intel Corp., USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-9-3] Realizing High Quality Metal-Gate/High-Permittivity Dielectric Stack on Indium Gallium Arsenide by Vacuum Annealing and Silane Treatment

H. C. Chin¹, B. Wang², P. C. Lim², L. J. Tang³, C. H. Tung³, Y. C. Yeo¹ (1.National Univ. of Singapore, 2.Inst. of Materials Res. and Eng., 3.Inst. of Microelectronics, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-9-4] Fabrication of III-V MOS Structure by using Selective Oxidation of InAlAs

S. Nakagawa¹, M. Yokoyama¹, O. Ichikawa², M. Hata², M. Tanaka¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Sumitomo Chemical Co., Ltd.)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-9-5] Improved Electrical Characteristics of Atomic-layer-deposited Al₂O₃/GaAs MOS Capacitors with (NH₄)₂S-C₄H₉OH Sulfide Treatment

H. C. Chiang¹, C. H. Chien^1,2, C. C. Cheng¹, C. L. Lin¹, C. S. Chen¹, G. L. Luo², Y. L. Shen², C. C. Kei³, C. N. Hsiao³ (1.National Chiao Tung Univ., 2.National Nano Device Lab., 3.National Applied Res. Lab., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-9-6] GaAs MOS Diodes with the Gate Oxide Formed by PEC Method

H. Y. Lee¹, Y. F. Lin², L. R. Lou¹ (1.National Cheng Kung Univ., 2.National Formosa Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-1-1] Nanowire Impact Ionization Transistors (I-FETs) (Invited)

Y. C. Yeo¹, G. Samudra¹, C. H. Heng¹, E. H. Toh¹, C. Shen¹ (1.National Univ. of Singapore, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-1-2] Fabrication of N-type and P-type Schottky Barrier Thin-Film-Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Method

J. W. Shin¹, C. J. Choi², W. J. Cho¹ (1.Kwangwoon Univ., 2.Chonbuk Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-1-3] Self-Aligned Top-Gate Nanocrystalline Silicon Thin-Film Transistors with Source/Drain Regions Activated by Diode-Pumped Continuous-Wave Green Laser

W. Sato¹, A. Hara¹, S. Kurauchi¹, Y. Doi¹, M. Kobata², K. Kitahara² (1.Tohoku Gakuin Univ., 2.Shimane Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-1-4] Novel F-shaped Triple Gate Structure for Improvement of Hot Carrier Reliability in Low Temperature Poly-Si TFT

S. H. Choi¹, H. S. Shin¹, S. G. Park¹, M. K. Han¹ (1.Seoul National Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

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