[A-2-3] Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric

C. Y. Kang¹, C. S. Park¹, H. K. Park¹, S. C. Song¹, R. Choi¹, B. H. Park², B. Woo², K. T. Lee³, J. Lee⁴, H. Hwang⁴, G. Bersuker¹, B. H. Lee¹, H. H. Tseng¹, R. Jammy⁵ (1.SEMATECH, 2.Poongsan Microtech, USA, 3.POSTECH, 4.GIST, Korea, 5.IBM Assignee, USA)

https://doi.org/10.7567/SSDM.2008.A-2-3