[A-6-1] Self-limiting Growth Behavior of Epitaxial NiSi₂ and its Impact on Controlled Silicidation of Metal Source/Drain in Silicon Nanowire MOSFETs

S. Migita¹、Y. Morita¹、N. Taoka¹、W. Mizubayashi¹、H. Ota¹ (1.AIST, Japan)

https://doi.org/10.7567/SSDM.2008.A-6-1