Resistive Switching Memory using High-&#954; Ta<sub>2</sub>O<sub>5</sub> Films

Y. R. Tsai; S. Maikap; D. Panda; S. Z. Rahaman; C. S. Lai; P. J. Tzeng; C. H. Lin; T. C. Tien; T. Y. Wu; C. C. Wang; M. J. Kao; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2008.C-8-2

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[C-8-2] Resistive Switching Memory using High-κ Ta₂O₅ Films

Y. R. Tsai¹、S. Maikap¹、D. Panda¹、S. Z. Rahaman¹、C. S. Lai¹、P. J. Tzeng²、C. H. Lin²、T. C. Tien²、T. Y. Wu²、C. C. Wang²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.、2.Industrial Tech. Res. Inst., Taiwan)

https://doi.org/10.7567/SSDM.2008.C-8-2

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2008 International Conference on Solid State Devices and Materials

[C-8-2] Resistive Switching Memory using High-κ Ta2O5 Films

[C-8-2] Resistive Switching Memory using High-κ Ta₂O₅ Films