Excitation Wavelength Dependence of Carrier Relaxation in Self-assembled InAs Quantum Dots Embedded in Strain-relaxed In<sub>0.35</sub>Ga<sub>0.65</sub>As Barrier Layers

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

T. Mukai¹、T. Takahashi¹、K. Morita¹、T. Kitada¹、T. Isu¹ (1.Univ. of Tokushima, Japan)