Control of Sn Precipitation and Strain-relaxation in Compositionally Step-graded Ge<sub>1-x</sub>Sn<sub>x</sub> Buffer Layers for Tensile-strained Ge Layers

2008 International Conference on Solid State Devices and Materials

2008年9月23日〜 2008年9月26日
Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

Y. Shimura¹、N. Tsutsui¹、O. Nakatsuka¹、A. Sakai²、S. Zaima¹ (1.Nagoya Univ.、2.Osaka Univ., Japan)