[H-2-1] Single Artificial Atom Lasing (Invited)
J. S. Tsai1,2,3, O. Astafiev1,2, K. Inomata2, A. O. Niskanen3,4, T. Yamamoto1,2,3, Y. A. Pashkin1,2, Y. Nakamura1,2,3
(1.NEC Corp., 2.RIKEN, 3.CREST-JST, Japan, 4.VTT Technical Res. Center of Finland, Finland)
https://doi.org/10.7567/SSDM.2008.H-2-1