The Japan Society of Applied Physics

[J-6-1] Numerical Simulation of the Read Disturb Behavior on the ONO Scaling Margin in SONOS Flash Memory

C. H. Lee1,2、C. W. Wu1、S. W. Lin1、T. H. Yeh1、S. H. Gu1、K. F. Chen1、Y. J. Chen1、J. Y. Hsieh1、I. J. Huang1、N. K. Zous1、T. T. Han1、M. S. Chen1、W. P. Lu1、K. C. Chen1、T. Wang1,2、C. Y. Lu1 (1.Macronix International Co., Ltd、2.National Chiao Tung Univ., Taiwan)

https://doi.org/10.7567/SSDM.2008.J-6-1