[J-7-3] Effect of High Pressure Oxygen Annealing (HPOA) on the Electrical Characteristics of Metal-Alumina-Nitride-Oxide-Silicon (MANOS)-type Flash Memory Devices

Y. Ju¹, M. Chang¹, S. Jung¹, M. Jo¹, J. Lee¹, J. Yoon¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

https://doi.org/10.7567/SSDM.2008.J-7-3