[B-5-3] Improvement of Interfacial Characteristics and Reliability in Poly/SiON Gate Stack by Catalytic Effect of Hafnium Incorporation Technique

T. Shimizu¹、Y. Arayashiki¹、S. Inumiya¹、K. Nakajima¹、T. Aoyama¹、K. Eguchi¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.B-5-3