[A-1-1] Ultrathin Body and BOX SOI and _SSOI for Low Power Application at the 22nm technology node and below

F. Andrieu¹, C. Fenouillet-Béranger¹, O. Weber¹, S. Baudot¹, C. Buj¹, J. P. Noel¹, O. Thomas¹, O. Rozeau¹, P. Perreau¹, L. Tosti¹, L. Brévard¹, O. Faynot¹ (1.CEA-LETI/MINATEC)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] V_th Dependence of V_th Variability in Intrinsic Channel SOI MOSFETs with Ultra-Thin BOX

C. Lee¹, A. T. Putra¹, K. Shimizu¹, T. Hiramoto^1,2 (1.Univ. of Tokyo(Japan), 2.MIRAI-Selete(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO₂ gate stack

C. Buj-Dufournet¹, F. Andrieu¹, O. Faynot¹, O. Weber¹, F. Allain¹, L. Tosti¹, C. Fenouillet-Béranger¹, D. Lafond¹, S. Deleonibus¹ (1.CEA-LETI/MINATEC)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique

S. Dissanayake¹, S. Sugahara², M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo(Japan), 2.Tokyo Tech(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] The Impact of Uni-axial Strain and Dynamic Body Biases on Low Frequency Noise in Nanoscale pMOSFETs

K. L. Yeh¹, C. Y. Ku¹, W. L. Hong¹, J. C. Guo¹ (1.National Chiao Tung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-1-6] Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors

S. M. Koh¹, C. M. Ng², Z. Y. Zhao³, H. Maynard³, N. Variam³, T. Henry³, Y. Erokhin³, G. Samudra¹, Y. C. Yeo¹ (1.National Univ. of Singapore(Singapore), 2.Chartered Semiconductor Manufacturing Ltd.(Singapore), 3.Varian Semiconductor(USA))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-1-7] The Tunnel Source n-MOSFET: A Novel Asymmetric Device for Low Power Applications

N. Venkatagirish¹, A. Tura¹, R. Jhaveri¹, H. Y. Chang¹, J. Woo¹ (1.UCLA)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] A new definition of threshold voltage by constant slope for analysis of statistical variations of MOSFETs

T. Tanaka¹, H. Suzuki¹, O. Yamasaki¹ (1.Fujitsu Microelectronics Ltd.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-2-2] Temperature Coefficient of Threshold Voltage in Metal/High-k Gate Transistors with Various Thickness of TiN and Capping Layers

Y. Nishida^1,2, K. Eikyu¹, A. Shimizu¹, T. Yamashita¹, H. Oda¹, Y. Inoue¹, K. Shibahara² (1.Renesas Tech. Corp.(Japan), 2.Hiroshima Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Impact of interface roughness on threshold-voltage variation in ultra-small three-dimensional MOSFETs

N. Mori¹, H. Minari¹ (1.Osaka Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download