[I-9-1] Novel Second Harmonic Generation Optical Devices by using Nano-Domain Engineering

M. Minakata¹, H. Awano¹, M. Ohotsuka¹, F. Iwata¹, T. Taniuchi² (1.Shizuoka Univ.(Japan), 2.Tohoku Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[I-9-2] Strong Sum Frequency Generation in a GaAs/AlAs Coupled Multilayer Cavity Grown on a (113)B-oriented GaAs Substrate

F. Tanaka¹, T. Takahashi¹, K. Morita¹, T. Kitada¹, T. Isu¹ (1.Univ. of Tokushima)

2009 International Conference on Solid State Devices and Materials |PDF Download

[I-9-3] ZnO Channel Waveguides for Nonlinear Optic Applications

Y. Morales¹, T. Kita¹, A. Tsukazaki¹, M. Kawasaki¹, Y. Ohtera¹, H. Yamada¹ (1.Tohoku Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[I-9-4] Evidence of Carrier Accumulation Effects on the Response Enhancement in Thin-Film Electrochromic Devices

H. Yoshimura¹, Y. Tsuchiya², H. Mizuta², N. Koshida¹ (1.Tokyo Univ. of Agri. and Tech.(Japan), 2.Southampton Univ.(UK))

2009 International Conference on Solid State Devices and Materials |PDF Download

[I-9-5] Accurate Measurement of Nonlinear Optical Coefficients of Gallium Nitride

M. Abe¹, H. Sato², J. Suda³, M. Yoshimura⁴, Y. Kitaoka⁴, Y. Mori⁴, I. Shoji², T. Kondo¹ (1.Univ. of Tokyo(Japan), 2.Chuo Univ.(Japan), 3.Kyoto Univ.(Japan), 4.Osaka Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[I-9-6L] 2 x 2 Thermooptic Silicon Oxynitride Optical Switch Incorporating the Cascaded Multimode Interference Waveguides

R. W. Chuang^1,2, M. T. Hsu¹, Z. L. Liao¹ (1.National Cheng Kung Univ.(Taiwan), 2.National Nano Device Labs.(Tiawan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-1-1] Materials and Strain Issues in AlGaN/GaN HEMT Degradation

E. Muñoz¹, C. Rivera¹, F. Gonzalez-Posada¹, A. Redondo^1,2, F. Romero¹, R. Cuerdo¹, F. Calle¹, R. Gago³, A. Jimenez⁴, C. Palacio² (1.Univ. Politécnicade Madrid(Spain), 2.Univ.Autónoma de Madrid(Spain), 3.CSIC(Spain), 4.Univ. Alcalá de Henares(Spain))

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-1-2] Compressively Strained-In_xAl_1-xN/Al_0.22Ga_0.78N/GaN (x = 0.245-0.325) Heterostrucures FETs with a Regrown AlGaN Contact Layer

M. Hiroki¹, N. Maeda¹, N. Shigekawa¹ (1.NTT Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-1-3] AlGaN/GaN HFET using AlN/GaN Superlattice Barrier Layer

S. Yagi¹, Y. Kawakami¹, X. Q. Shen¹, A. Nakajima¹, T. Ide¹, M. Shimizu¹ (1.AIST)

2009 International Conference on Solid State Devices and Materials |PDF Download

[J-1-4] Effect of GaN Growth Pressure on the Device Characteristics of AlGaN/ GaN HEMTs on Silicon

J. Selvaraj¹, S. Lawrence Selvaraj¹, T. Egawa¹ (1.Nagoya Inst. of Tech.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (361 - 370)

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