[G-6-1] Overview and Future Challenge of High Density FeRAM

I. Kunishima¹, Y. Shimojo¹, A. Konno¹, J. Nishimura¹, T. Okada¹, H. Nakaki¹, Y. Yamada¹, S. Kitazaki¹, H. Furuhashi¹, Y. Minami¹, H. Kanaya¹, S. Shuto¹, K. Tomioka¹, K. Natori¹, K. Yamakawa¹, S. Shiratake¹, D. Takashima¹, T. Hamamoto¹, Y. Watanabe¹, A. Nitayama¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-6-2] A Negative Word-line Voltage Step-Down Erase Pulse Scheme with ΔV_TH=⅙ ΔV_ERASE for Enterprise SSD Application Ferroelectric(Fe)-NAND Flash Memories

R. Yajima¹, T. Hatanaka¹, M. Takahashi², S. Sakai², K. Takeuchi¹ (1.Univ. of Tokyo(Japan), 2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-6-3] Advancements and Future Challenges of Spin Torque Transfer MRAM

H. Yoda¹, T. Kishi¹, M. Yoshikawa¹, T. Nagase¹, K. Nishiyama¹, E. Kitagawa¹, T. Daibou¹, M. Amano¹, N. Shimomura¹, S. Takahashi¹, T. Kai¹, M. Nakayama¹, H. Aikawa¹, S. Ikegawa¹, M. Nagamine¹, J. Ozeki¹, S. Yuasa², M. Oogane³, S. Mizukami³, Y. Ando³, Y. Suzuki⁴, Y. Nakatani⁵, T. Miyazaki³, K. Ando² (1.Toshiba Corp.(Japan), 2.AIST(Japan), 3.Tohoku Univ.(Japan), 4.Osaka Univ.(Japan), 5.Univ. of Electro-comminumations(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-6-4] Effect of Self-heating on TDDB in Ultra-thin MgO Magnetic Tunnel Junctions for Spin MRAM

K. Hosotani¹, M. Nagamine¹, T. Ueda¹, H. Aikawa¹, S. Ikegami¹, Y. Asao¹, H. Yoda¹, A. Nitayama¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-7-1] Switching Mechanism of TaOx ReRAM

Z. Wei¹, Y. Kanzawa¹, K. Arita¹, Y. Katoh¹, S. Muraoka¹, S. Mitani¹, S. Fujii¹, K. Katayama¹, T. Ninomiya¹, T. Takagi¹ (1.Panasonic Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-7-2] Physical model for reset state of Ta₂O₅/TiO₂ stacked ReRAM

Y. Sakotsubo¹, M. Terai¹, S. Kotsuji¹, T. Sakamoto¹, H. Hada¹ (1.NEC Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-7-3] High-Speed Multilevel Resistive RAM using RTO WO_X

W. C. Chien^1,2, Y. C Chen¹, E. K. Lai^1,3, Y. Y. Lin¹, K. P. Chang¹, Y. D. Yao², P. Lin², S. F. Horng³, J. Gong³, S. C. Tsai¹, C. H. Lee¹, S. H. Hsieh¹, C. F. Chen¹, Y. H. Shih¹, K. Y. Hsieh¹, R. Liu¹, C. Y. Lu¹ (1.Macronix Int'l Co., Ltd.(Taiwan), 2.National Chiao Tung Univ.(Taiwan), 3.National Tsing Hua Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-7-4] Impact of Oxygen Vacancy on Interfacial Band Diagram Ti/Pr_1-xCa_xM_nO₃ Resistive Switching Junctions

S. Asanuma¹, H. Yamada¹, H. Akoh^1,2, A. Sawa¹ (1.AIST(Japan), 2.JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-8-1] Advances In High Power Density GaN Transistors

Y. F. Wu¹ (1.Transphorm Inc.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[G-8-2] Chemical and Electronic Properties of ALD-Al₂O₃/AlGaN Interfaces

Y. Hori¹, C. Mizue¹, K. Ooyama¹, M. Miczek², T. Hashizume¹ (1.Hokkaido Univ.(Japan), 2.Silesian Univ. of Tech.(Poland))

2009 International Conference on Solid State Devices and Materials |PDF Download