[G-9-6L] Charge transport in single and few layer graphene devices

M. F. Craciun¹, S. Russo^1,2, M. Yamamoto¹, J. B. Oostinga^2,3, A. Morpurgo³, S. Tarucha^1,4 (1.Univ of Tokyo(Japan), 2.Delft Univ of Tech.(The Netherlands), 3.Univ of Geneva(Switzerland), 4.Quantum Spin Information Project, International Cooperative Research Project(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-1] Epitaxial growth and defect generation in in-situ doped high percentage SiGe

A. Reznicek¹, T. N. Adam¹, Z. Zhu¹, K. E. Fogel¹, J. Li¹, L. Tai¹, P. Kulkami¹, J. Kim¹, S. W. Bedell¹, D. K. Sadana¹ (1.IBM)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-2] Study on SiGe Film Properties Fabricated using a Reactive Thermal CVD Method

M. Wakagi¹, I. Suzumura¹, H. Asanuma¹, E. Nishimura¹, M. Matsumura¹, A. Kagatsume¹, J. Hanna² (1.Hitachi, Ltd.(Japan), 2.Tokyo Tech(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-3] Compressively strained Ge channel heterostructures grown by RP-CVD for the next generation CMOS Devices

M. Myronov¹, V. A. Shah¹, A. Dobbie¹, X. C. Liu¹, V. H. Nguyen¹, D. R. Leadley¹ (1.Univ, of Warwick)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-4] Formation of High Ge Concentration Virtual Substrate by Laser Annealing

C. Y. Ong¹, K. L. Pey¹, J. P. Liu², Q. Wang², C. P. Wong¹, Z. X. Shen¹, X. C. Wang³, H. Zheng³, C. M. Ng², L. Chan² (1.Nanyang Technological Univ(Singapore), 2.Chartered Semiconductor Manufacturing Ltd.(Singapore), 3.Singapore Inst. Of Manufacturing Tech.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-5] Low Temperature (375℃) Metal Induced Lateral Crystallization (MILC) of Si_1-xGe_x (0≤x≤1) using Silicide/Germanide Forming Metals (Ni, Pd and Co)

T. H. Phung¹, R. Xie^1,2, S. Tripathy³, M. Yu², C. Zhu¹ (1.National Univ. of Singapore(Singapore), 2.Inst. of Microelectronics(Singapore), 3.Inst. Of Materials Res. And Eng.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-6] Low-dislocation-density 50nm Ge Fin Fabrication on Si substrate

C. T. Chung¹, S. C. Huang², G. L. Luo², C. H. Ko³, C. H. Wann³, H. Y. Lin³, Z. Y. Han¹, C. C. Cheng¹, C. H. Chien^1,2 (1.National Chiao Tung Univ.(Taiwan), 2.National Nano Device Lab.(Taiwan), 3.TSMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-7] Positioning and numbering Ge quantum dots for effective quantum electrodynamic devices

K. H. Chen¹, C. Y. Chien¹, W. T. Lai¹, P. W. Li¹ (1.National Central Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-8] Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum-Dot Structures

K. Watanabe¹, Y. Kimura¹, K. Mukai¹ (1.Yokohama National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[H-1-9] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

M. Yoshimura¹, K. Tomioka¹, K. Hiruma¹, S. Hara¹, J. Motohisa¹, T. Fukui¹ (1.Hokkaido Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (261 - 270)

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