[H-1-6] Low-dislocation-density 50nm Ge Fin Fabrication on Si substrate

C. T. Chung¹、S. C. Huang²、G. L. Luo²、C. H. Ko³、C. H. Wann³、H. Y. Lin³、Z. Y. Han¹、C. C. Cheng¹、C. H. Chien^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab.(Taiwan)、3.TSMC(Taiwan))

https://doi.org/10.7567/SSDM.2009.H-1-6