[E-6-1] Metal-free Elementary Semiconductor Nanowires: Synthesis and Device Applications

D. Whang¹, S. Hwang¹ (1.Sungkyunkwan Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-6-2] Theoretical Study on Thermoelectric Properties of Ge and Si Nanowires

W. Huang¹, C. S. Koong¹, G. Liang¹ (1.National Univ. of Singapore)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-6-3] Shell Strain Effects on Valence Band Structure and Transport Property in Ge/Si_1-xGe_x Core-Shell Nanowire

H. Xu¹, Y. Zhao¹, Y. He¹, C. Fan¹, G. Du¹, X. Liu¹, R. Han¹, J. Kang¹ (1.Peking Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-6-4] RF Characterization and Equivalent Circuit Modeling of Ge Nanowires

J. H. Ahn¹, M. G. Kang¹, B. S. Kim², J. Lee², D. H. Hwang¹, D. J. Lee¹, H. T. Kim¹, S. W. Hwang¹, D. Whang², D. Ahn³ (1.Korea Univ.(Korea), 2.Sungkyunkwan Univ.(Korea), 3.Univ. of Seoul(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-6-5] Device and Circuit Co-Design Strategy for Radio Frequency (RF) Applications based on Silicon Nanowire (SNW) MOSFETs

S. Cho¹, H. S. John¹, I. H. Park¹, J. H. Lee¹, H. Shin¹, B. G. Park¹ (1.Seoul National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-7-1] Performance Improvement of Poly-Si Nanowire Transistors Featuring In-Situ Doped Source/Drain

W. C. Chen¹, H. C. Lin^1,2, Y. C. Chang¹, T. Y. Huang¹ (1.National Chiao Tung Univ.(Taiwan), 2.National Nano Device Lab. (Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-7-2] Series Resistance Behavior Extracted from Silicon Nanowire Transistors using the Y-function Technique

R. H. Baek¹, C. K. Baek², S. W. Jung³, Y. Y. Yeoh⁴, D. W. Kim⁴, J. S. Lee^1,3, D. M. Kim², Y. H. Jeong^1,3 (1.POSTECH(Korea), 2.KIAS(Korea), 3.NCNT(Korea), 4.Samsung Electronics Corp.(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-7-3] A Theoretical Study of Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs

J. Hattori^1,3, S. Uno^1,3, N. Mori², K. Nakazato^1,3 (1.Nagoya Univ.(Japan), 2.Osaka Univ.(Japan), 3.SORST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-7-4] Impact of adequate selection of channel direction on (001) and (110) wafer orientation for strained nanowire transistors

A. Seike¹, H. Takai¹, I. Tsuchida¹, J. Masuda², D. Kosemura², A. Ogura², T. Watanabe¹, I. Ohdomari¹ (1.Waseda Univ.(Japan), 2.Meiji Univ.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[E-7-5] Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation

Y. Lee¹, K. Kakushima¹, K. Shiraishi², K. Natori¹, H. Iwai¹ (1.Tokyo Tech(Japan), 2.Univ. of Tsukuba(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

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