[B-7-2] ¹⁸O isotope tracing study of GeO Desorption from GeO₂/Ge Structure

S. Wang¹, K. Kita^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo (Japan), 2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-7-3] Diffusion control of n-type impurities in Ge using co-doping technique for ultra-shallow and highly doped n⁺/p junction in Ge nMOSFETs

M. Koike¹, K. Tatsumura² (1.MIRAI-Toshiba(Japan), 2.Toshiba Corp.(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-7-4] Effects of MIS Interfacial Layers on Interface Trap Density near Conduction Band Edge in Ge MIS Structures

N. Taoka¹, W. Mizubayashi¹, Y. Morita¹, S. Migita¹, H. Ota¹, S. Takagi^1,2 (1.MIRAI-AIST(Japan), 2.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-7-5] Spectroscopic Ellipsometry Study on Defects Generation in GeO₂/Ge stacks

K. Kita^1,2, M. Yoshida¹, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo(Japan), 2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-8-1] Process Condition Dependence of Random V_T Variability in NFETs and PFETs

T. Tsunomura¹, A. Nishida¹, K. Takeuchi¹, S. Inaba¹, S. Kamohara¹, K. Terada², T. Hiramoto^1,3, T. Mogami¹ (1.MIRAI-Selete(Japan), 2.Hiroshima City Univ.(Japan), 3.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-8-2] Comprehensive Design Methodology of Extension Profile to Suppress Boron TED in High Performance High-k/Metal SiGe pMOSFETS

C. Y. Kang¹, Y. H. Kim², M. S. Park³, J. W. Oh¹, B. G. Min⁴, K. S. Lee⁴, S. K. Banerjee², P. Majhi¹, H. H. Tseng¹, R. Jammy¹ (1.SEMATECH(USA), 2.Univ. of Texas at Austin(USA), 3.POSTECH(Korea), 4.Jusung Engineering(Korea))

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-8-3] Leakage Reduction by Thermal Annealing of NiPtSi Silicided Junctions and Anomalous Spider-Web of In-Layer Pt Network

M. Tsuchiaki¹, A. Nishiyama¹ (1.Toshiba Corp.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-8-4] Concentration of Active Dopants at NiSi/Si Interface Segregated by "Snowplow" Effect for Schottky Barrier Height Tuning

S. Migita¹, Y. Morita¹, N. Taoka¹, W. Mizubayashi¹, H. Ota¹ (1.MIRAI-AIST)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-8-5] Activation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jet

K. Matsumoto¹, S. Higashi¹, H. Furukawa¹, T. Okada¹, H. Murakami¹, S. Miyazaki¹ (1.Hiroshima Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[B-9-1] On the Reliability of and Self-Compensation in Strained Transistors

M. A. Alam¹, A. E. Islam¹ (1.Purdue Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (51 - 60)

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