The Japan Society of Applied Physics

[B-7-4] Effects of MIS Interfacial Layers on Interface Trap Density near Conduction Band Edge in Ge MIS Structures

N. Taoka1, W. Mizubayashi1, Y. Morita1, S. Migita1, H. Ota1, S. Takagi1,2 (1.MIRAI-AIST(Japan), 2.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2009.B-7-4