[K-9-4L] Observation of Spin Relaxation in InGaAs/AlAsSb Quantum Wells

S. Izumi¹, S. Gozu², T. Mozume², Y. Saeki¹, T. Nukui¹, A. Tackeuchi¹ (1.Waseda Univ.(Japan), 2.AIST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-1] Formation of Pr Oxide Films by Atomic Layer Deposition using Pr(EtCp)₃ Precursor

H. Kondo¹, H. Matsui¹, K. Furuta¹, M. Sakashita¹, S. Zaima¹ (1.Nagoya Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-2] Advanced High-k Materials and Electrical Analysis for Memories: the Role of SiO₂-high-k Dielectric Intermixing

L. Morassi¹, L. Larcher¹, L. Pantisano², A. Padovani¹, R. Degraeve², M. B. Zahid², B. J. O'Sullivan² (1.Univ. di Modena e Reggio Emilia(Italy), 2.IMEC(Belgium))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-3] Crystalline Structures and Electrical Properties of High Nitrogen-content Hf-Si-N Films

K. Miyamoto¹, H. Kondo¹, S. Zaima¹ (1.Nagoya Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-4] Study of La-doped GeO₂ Films from Defect Annihilation Viewpoint

T. Tabata^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo(Japan), 2.CREST-JST(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-5] Characterization and Improvement of Charge Trapping in Gadolinium Incorporated Hf-based high-k/Metal gated n-MOSFETs

C. W. Chen¹, H. C. Lai¹, Y. L. Yeh¹, W. K. Yeh², S. H. Shu³, C. T. Lin³, C. H. Hsu³, L. W. Cheng³, M. Ma³ (1.Ming Hsin Univ. of Sci and Tech.(Taiwan), 2.National Univ. of Kaohsiung(Taiwan), 3.UMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-6] Spectroscopic Studies of Electronic Structure of Intrinsic O-atom Vacancy Defects in Hf Dioxide and Other Transition Metal ™ Oxides

G. Lucovsky¹, K. B. Chung¹, H. Seo¹, J. P. Long¹ (1.North Carolina State Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-7] Electronic Band Structures of Zirconium and Hafnium Oxides

T. Hamada^1,3, T. Ohno^2,3 (1.Hitachi, Ltd.(Japan), 2.Inst. Of Materials Res.(Japan), 3.Univ. of Tokyo(Japan))

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-8] Threshold Voltage (V_th) Tunability of pMOSFETs with Ternary Hf_xMo_yN_z Metal Gate and Gd₂O₃ High-k Gate Dielectric

H. K. Peng¹, C. S. Lai¹, J. C. Wang¹ (1.Chang Gung Univ.)

2009 International Conference on Solid State Devices and Materials |PDF Download

[P-1-9] High Performance ZnO Thin-Film Transistors using High-ҝ TiHfO Gate Dielectrics

N. C. Su¹, C. C. Huang¹, Y. H. Chen¹, C. K. Chiang¹, H. Y. Huang¹, C. H. Wu², A. Chin³, S. J. Wang¹ (1.National Cheng Kung Univ.(Taiwan), 2.National Chung Hua Univ.(Taiwan), 3.National Chiao Tung Univ.(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF Download

707 results (471 - 480)

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