[H-1-9] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

M. Yoshimura¹、K. Tomioka¹、K. Hiruma¹、S. Hara¹、J. Motohisa¹、T. Fukui¹ (1.Hokkaido Univ.)

https://doi.org/10.7567/SSDM.2009.H-1-9