CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

K. Mizunuma; J. H. Park; S. Ikeda; H. Yamamoto; K. Miura; H. Gan; H. Hasegawa; J. Hayakawa; K. Ito; F. Matsukura; H. Ohno

doi:https://doi.org/10.7567/SSDM.2009.K-7-2

[K-7-2] CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio

K. Mizunuma¹, J. H. Park¹, S. Ikeda¹, H. Yamamoto^1,2, K. Miura^1,2, H. Gan¹, H. Hasegawa¹, J. Hayakawa², K. Ito², F. Matsukura¹, H. Ohno¹ (1.Tohoku Univ.(Japan), 2.Hitachi, Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.K-7-2

2009 International Conference on Solid State Devices and Materials

[K-7-2] CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio