[P-13-13] Post-Annealing Effect on the Electrical Properties of Top-gated SWNT Network Transistors

S. C. Min^1,2、W. J. Park¹、U. J. Kim² (1.Hanyang Univ.(Korea)、2.Samsung Advanced inst. Of tech(Korea))

https://doi.org/10.7567/SSDM.2009.P-13-13