Effect of Fluorine Incorporation on Wsix/Al2O3/GaAs Gate Stack

B. S. Ong; K. L. Pey; C. Y. Ong; C. S. Tan; C. L. Gan; H. Cai; D. A. Antoniadis; E. Fitzgerald

doi:https://doi.org/10.7567/SSDM.2010.I-3-3

2010 International Conference on Solid State Devices and Materials

2010年9月21日〜 2010年9月24日
The University of Tokyo, Tokyo, Japan

[I-3-3] Effect of Fluorine Incorporation on Wsi_x/Al₂O₃/GaAs Gate Stack

B. S. Ong¹、K. L. Pey¹、C. Y. Ong¹、C. S. Tan¹、C. L. Gan¹、H. Cai¹、D. A. Antoniadis²、E. Fitzgerald² (1.Nanyang Tech. Univ. , Singapore、2.Massachusetts Institute of Technology , USA)

https://doi.org/10.7567/SSDM.2010.I-3-3

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2010 International Conference on Solid State Devices and Materials

[I-3-3] Effect of Fluorine Incorporation on Wsix/Al2O3/GaAs Gate Stack

[I-3-3] Effect of Fluorine Incorporation on Wsi_x/Al₂O₃/GaAs Gate Stack