[I-4-3] Influence of inserting AlN between AlSiON and 4H-SiC interface for the MIS structure on SiC

N. Komatsu¹、T. Satoh¹、M. Honjo¹、T. Futatuki¹、C. Kimura¹、H. Aoki¹ (1.Osaka Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.I-4-3