[AL-6-3] Characteristics of 4H-SiC p-Channel MOSFETs with Ion-Implanted Buried Channel M. Okamoto1、M. Iijima1、T. Nagano1、K. Fukuda1、H. Okumura1 (1.AIST , Japan) https://doi.org/10.7567/SSDM.2011.AL-6-3