[AL-6-5] Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN

R. Hasegawa¹、N. Yafune¹、H. Tokuda¹、Y. Mori³、H. Amano⁴、M. Kuzuhara¹ (1.Univ. of Fukui、2.Sharp Corp.、3.Osaka Univ.、4.Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.AL-6-5