[D-5-1] Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET

H. Suzuki¹, R. Kuroda¹, A. Teramoto¹, A. Yonezawa¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.D-5-1