[D-5-1] Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET

H. Suzuki¹、R. Kuroda¹、A. Teramoto¹、A. Yonezawa¹、S. Sugawa¹、T. Ohmi¹ (1.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.D-5-1