[E-1-2] 1.2 nm-EOT Al₂O₃/Ge Gate Stack with GeO_x-free Interface

T. Tabata^1,2、C. H. Lee^1,2、T. Nishimura^1,2、S. K. Wang^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.CREST-JST , Japan)

https://doi.org/10.7567/SSDM.2011.E-1-2