[K-1-6] Room Temperature Single Charge Memory by Carbon Nanotube Transistor With SiN_x /Al₂O₃ Wrapped Double Gate Insulator Layers

T. Kamimura^1,2,3、Y. Hayashi^2,3、K. Matsumoto^1,2,3 (1.Osaka Univ.、2.CREST-JST、3.AIST , Japan)

https://doi.org/10.7567/SSDM.2011.K-1-6