[K-2-3] Argon Ion Bombardment to Improve Contacts in Solution-Processed Single-Walled Carbon Nanotube Thin Film Transistor

X. Yi¹、G. Nakagawa¹、H. Ozawa¹、T. Fujigaya¹、N. Nakashima¹、T. Asano¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.K-2-3