[K-9-3] Electron tunneling in bilayer graphene p-n junction controlled by gate electric field

H. Miyazaki^1,2、M. Lee¹、S. L. Li¹、A. Kanda^2,3、K. Tsukagoshi^1,2 (1.MANA, NIMS、2.CREST-JST、3.Univ. of Tsukuba , Japan)

https://doi.org/10.7567/SSDM.2011.K-9-3