The Japan Society of Applied Physics

2011 International Conference on Solid State Devices and Materials

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[KM-4-3L] High-Frequency Characterization of Vertical InAs Nanowire Wrap-Gate FETs on Si(111) Substrates

S. Johansson1, M. Egard1, S. G. Ghalamestani1, M. Borg1, M. Berg1, E. Lind1, L. E. Wernersson1 (1.Lund Univ. , Sweden)

https://doi.org/10.7567/SSDM.2011.KM-4-3L