[P-1-10] Analysis of Raman Spectra from Offset Spacer Region of Si-MOSFET Structure using Simulated Stress Tensor and Absorbed Light Intensity by FDTD Simulation

A. Satoh¹、T. Tada¹、V. Poborchii¹、T. Kanayama¹、S. Satoh²、H. Arimoto¹ (1.AIST、2.Fujitsu Semiconductor Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.P-1-10