[P-3-21L] Impact of Poly Depletion on Accurate Evaluation of Self-Heating Effects in SOI MOSFETs with Four-point Gate Resistance Measurement Method

N. Beppu¹、T. Takahashi¹、T. Ohashi¹、K. Uchida¹ (1.Tokyo Tech , Japan)

https://doi.org/10.7567/SSDM.2011.P-3-21L