[P-4-16L] SET polarity dependent resistive switching memory characteristics using IrOx/GdOx/WOx/W structure
D. Jana1, S. Maikap1, T.C. Tien2, H.Y. Lee2, W.S. Chen2, F.T. Chen2, M. J. Kao2, M. J. Tsai2
(1.Chang Gung Univ., 2.ITRI , Taiwan)
https://doi.org/10.7567/SSDM.2011.P-4-16L