An Al<sub>2</sub>O<sub>3</sub>/InSb/Si MOS Diode Having an Ultra-Thin InSb Layer

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

A. Kadoda¹, T. Iwasugi¹, K. Nakatani¹, K. Nakayama¹, M. Mori¹, K. Maezawa¹, E. Miyazaki², T. Mizutani² (1.Univ. of Toyama, 2.Nagoya Univ. , Japan)